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Edit the input file edi2adf. inp to modify the Sender and Receiver IDs as shown in Scenario 1, Figure 7.
编辑输入文件edi2adf . inp,修改Sender和Receiver IDs,如图7中的场景1所示。
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The microstructures of INP latex films were characterized by IR and transmission electron microscopy (TEM).
以红外光谱、透射电子显微镜表征互穿共聚物乳胶膜的微观结构。
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It is found that pore's depth and diameter on n-InP with heavily doped concentration is larger than moderately doped samples.
本文通过对不同掺杂浓度的样品进行刻蚀,发现重掺杂的样品刻蚀出的孔在深度和孔径上都比中度掺杂的大。
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Luxtera's design eliminates the need to use expensive group iii-v compounds, such as gallium arsenide (GaAs) and indium phosphate (InP), in the semiconductors.
Luxtera的设计消除了使用昂贵的III - V化合物半导体材料(如砷化镓和磷化铟)的必要。
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The results indicate that a stable and suitable thermal field, the transparence of B_2O_3, doping quantity are important conditions for growth of twin-free InP crystal.
实验证明,建立一个稳定合适的热场、保持b_2o_3的透明度、控制好掺杂量等是减少孪晶的必要条件。
1. 一种文件格式。
2. INP(Impulse Noise Protection),ADSL2/2+和VDSL2系统定义了“脉冲噪声防护”(INP),表示系统对脉冲噪声的防护能力,INP的数值表示了通过交织和FEC可以保护的最多受脉冲噪声破坏的DMT符号的数量。